(China (Mainland))
Product Summary
The MW7IC2750NBR1 is a RF Power Field Effect Transistor. It is designed for WiMAX base station applications with frequencies up to 2700 MHz. The MW7IC2750NBR1 is suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.
Parametrics
MW7IC2750NBR1 absolute maximum ratings: (1)Drain-Source Voltage VDS: -0.5,+65 Vdc; (2)Gate-Source Voltage VGS: -6.0, +10 Vdc; (3)Operating Voltage VDD: 32, +0 Vdc; (4)Storage Temperature Range Tstg: - 65 to +150 ℃; (5)Case Operating Temperature TC: 150 ℃; (6)Operating Junction Temperature TJ: 225 ℃; (7)Input Power Pin: 13 dBm.
Features
MW7IC2750NBR1 features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source Parameters; (2)On-Chip Matching (50 Ohm Input, DC Blocked); (3)Integrated Quiescent Current Temperature Compensation with Enable/Disable Function; (4)Integrated ESD Protection; (5)Greater Negative Gate-Source Voltage Range for Improved Class C Operation; (6)225℃ Capable Plastic Package; (7)RoHS Compliant; (8)In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Diagrams
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 MW7IC2750NBR1 |
Freescale Semiconductor |
RF Amplifier HV7 2700MHZ TO272WB14 |
Data Sheet |
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