(China (Mainland))
Product Summary
The mhl21336 is a 3G Band RF Linear LDMOS Amplifier. The mhl21336 is designed for ultra–linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics of the mhl21336 are ideal for digital CDMA modulation systems.
Parametrics
MHL21366 absolute maximum ratings: (1)DC Supply Voltage:30 Vdc; (2)RF Input Power :+5 dBm; (3)Storage Temperature Range : –40 to +100 ℃; (4)Operating Case Temperature Range:–20 to +100 ℃.
Features
MHL21336 features:(1)Third Order Intercept: 45 dBm Typ; (2)Power Gain: 31 dB Typ (＠f = 2140 MHz); (3)Excellent Phase Linearity and Group Delay Characteristics; (4)Ideal for Feedforward Base Station Applications.
Diagrams
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 MHL21336 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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MHL21336 |
Other |
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Data Sheet |
Negotiable |
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MHL2ACLTE10NJ |
KOA Speer |
Power Inductors 10nH 5% |
Data Sheet |
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MHL2ACLTE12NJ |
KOA Speer |
Power Inductors 12nH 5% |
Data Sheet |
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MHL2ACLTE15NJ |
KOA Speer |
Power Inductors 15nH 5% |
Data Sheet |
Negotiable |
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MHL2ACLTE18NJ |
KOA Speer |
Power Inductors 18nH 5% |
Data Sheet |
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MHL2ACLTE1N5S |
KOA Speer |
Power Inductors 1.5nH +/-0.3nH |
Data Sheet |
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