Product Summary

The IRG4PH40UDPBF is an insulated gate bipolar transistor with ultrafast soft recovery diode.

Parametrics

IRG4PH40UDPBF absolute maximum ratings: (1)VCES Collector-to-Emitter Breakdown Voltage: 1200 V; (2)IC @ TC = 25℃ Continuous Collector Current: 41 V; (3)IC @ TC = 100℃ Continuous Collector Current: 21 V; (4)ICM Pulsed Collector Current: 82 A; (5)ILM Clamped Inductive Load Current: 82 A; (6)IF @ TC = 100℃ Diode Continuous Forward Current: 8.0 A; (7)IFM Diode Maximum Forward Current: 130 A; (8)VGE Gate-to-Emitter Voltage: ±20 V; (9)PD @ TC = 25℃ Maximum Power Dissipation: 160 W; (10)PD @ TC = 100℃ Maximum Power Dissipation: 65 W; (11)TJ TSTG Operating Junction and Storage Temperature Range: -55 to + 150 ℃; (12)Soldering Temperature, for 10 seconds: 300 ℃(0.063 in. (1.6mm) from case ).

Features

IRG4PH40UDPBF features: (1)UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode; (2)New IGBT design provides tighter parameter distribution and higher efficiency than previous generations; (3)IGBT co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations; (4)Industry standard TO-247AC package; (5)Lead-Free.

Diagrams

IRG4PH40UDPBF diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
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Data Sheet
0-1: $4.64
1-25: $3.39
25-100: $2.69
100-250: $2.58
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